In this matter, ternary IIIвЂ“V compound InGaAs is considered as a reliable material for future CMOS devices, regarding to its high electron mobility, saturation velocity, achievable band gap engineering and narrow band gap in comparison with the Si or GaAs base device counterparts. Another important option, in order to overcome the scaling limitation, is to seek any possible alternative of вЂњbeyond SiвЂќ channel materials, such as Germanium and IIIвЂ“V compound semiconductors. To conquer this limitations, several new technologies such as high-k dielectrics, metal gate electrodes, stressors, and new transistor architectures based on silicon-on-insulator (SOI), such as Fin FETs, Junctionless transistors or gate-all-around FETs, have been proposed. This can make a crucial challenge against the performance improvements of the scaled devices mentioned by the International Technology Roadmap of Semiconductors (ITRS). The continuous scaling of MOS devices leads to some fundamental limits such as short channel effects (SCEs) and high leakage current related to having lower gate controllability on the channel. The results of RF measurement for cut-off and maximum oscillation frequency for devices with different gate lengths are compared. The source/drain overlap length for the device is approximately extracted about 51 nm with the leakage current in order of 10 в€’8 A. The high drain current of 1.13 A/mm and maximum extrinsic transconductance of 678 mS/mm with the field effect mobility of 364 cm 2/Vs are achieved for the gate length and width of 0.2 Вµm and 30Вµm, respectively. Scaling the gate length revealed good enhancement in all investigated parameters but the negative shift in threshold voltage was observed for shorter gate lengths. In this letter, impact of gate length variation on device parameter such as threshold voltage, high and low voltage transconductance, subthreshold swing and off current are investigated at room temperature. The devices with different gate lengths were fabricated with the Al 2O 3 oxide layer with the thickness of 8 nm. A multi-gate n-type In 0.53Ga 0.47As MOSFET is fabricated using gate-first self-aligned method and air-bridge technology.

Lg airbridge down